Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Silicon carbide

Related publications (32)

Effects of surface rigidity and metallicity on dielectric properties and ion interactions at aqueous hydrophobic interfaces

Philip Robin Loche

Using classical molecular dynamics simulations, we investigate the dielectric properties at interfaces of water with graphene, graphite, hexane, and water vapor. For graphite, we compare metallic and nonmetallic versions. At the vapor-liquid water and hexa ...

AIP Publishing2022

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Al uptake in calcium silicate hydrate and the effect of alkali hydroxide

Karen Scrivener, Yan Yan

The effect of Al and of pH on the structure of calcium silicate hydrate (C-S-H), the most important hydration product in Portland and blended cement, was studied at Ca/Si similar to 1.0. The presence of Al led to higher amounts of secondary phases, larger ...

Pergamon-Elsevier Science Ltd2022

Visible-light driven water oxidation and oxygen production at soft interfaces

Hubert Girault, Astrid Johana Olaya Avendano, Jorge Gustavo Uranga, Julieta Soledad Riva

The visible light driven water oxidation reaction (WOR) by the organic electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (TCNQF(4)) was studied at the water|butyronitrile interface. The WOR was performed at neutral pH, and without any ...

Royal Society of Chemistry2022

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Yusuf Leblebici, Zuhal Tasdemir

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

Surface Oxygenate Species on TiC Reinforce Cobalt-Catalyzed Fischer-Tropsch Synthesis

Andreas Züttel, Wen Luo

Carbide-supported metal catalysts attract extensive research interests owing to the special properties of metal carbide and the interactions between metals and the carbide supports. While surface oxide species are inevitable in carbide materials, their rol ...

AMER CHEMICAL SOC2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Processing and micro-mechanical characterization of multi-component transition MC carbides in iron

Andreas Mortensen, Léa Deillon, Goran Zagar, Marta Fornabaio, Lionel Michelet

We prepare multi-component transition monocarbides of chosen composition by arc-melting together a pre-alloy of the transition metals and cast iron. Based on the elements Ti, Ta, V, Nb and W, 51 different binary, ternary and quaternary compositions are pro ...

2021

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Alessandro Floriduz, Mehdi Naamoun

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

AMER CHEMICAL SOC2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

IOP PUBLISHING LTD2021

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

Christophe Ballif, Matthieu Despeisse, Mathieu Gérard Boccard, Grégory Bugnon, Corsin Battaglia, Sylvain Nicolay, Michael Elias Stückelberger, Jordi Escarre Palou, Laura Ding, Peter Cuony, Gaetano Parascandolo

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar ce ...

Ieee2012