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Concept

Extreme ultraviolet lithography

Related publications (27)

Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions

Gabriel Aeppli

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. ...

NATURE PUBLISHING GROUP2020

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Grigore Suruceanu, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

Ultrasensitive optofluidic enzyme-linked immunosorbent assay by on-chip integrated polymer whispering-gallery-mode microlaser sensors

Jijun He

Optical whispering-gallery-mode (WGM) microcavities offer great promise in ultrasensitive biosensors because of their unique ability to enable resonant recirculation of light to achieve strong light-matter interactions in microscale volumes. However, it re ...

ROYAL SOC CHEMISTRY2020

Frequency-scalable fabrication process flow for lithium niobate based Lamb wave resonators

Luis Guillermo Villanueva Torrijo, Muhammad Faizan

In this paper, we demonstrate the fabrication and characterization of lithium niobate (LN) based Lamb wave mode (S0 and SH0) resonators that address the stringent requirements of RF filtering for modern communication systems. The devices consist of a 400 n ...

IOP PUBLISHING LTD2020

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

A high-power LED-based illumination system has been developed as a replacement for the mercury arc lamps used in mask-aligner lithography. LEDs are arranged in a grid array and placed in the entrance aperture of individual reflectors. Those reflectors decr ...

SPIE2019

Ion beam etching redeposition for 3D multimaterial nanostructure manufacturing

Philippe Renaud, Arnaud Bertsch, Benoît Xavier Emmanuel Desbiolles

A novel fabrication method based on the local sputtering of photoresist sidewalls during ion beam etching is presented. This method allows for the manufacture of three-dimensional multimaterial nanostructures at the wafer scale in only four process steps. ...

2019

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Toralf Scharf, Wilfried Noell, Chen Yan, Raoul Kirner

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is opti ...

2019