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Concept

Indium gallium arsenide

Related publications (32)

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Johann Emmeram Riemensberger, Wenle Weng

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Nicolas Grandjean, Jean-François Carlin, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Transferable machine-learning models of complex materials: the case of GaAs

Giulio Imbalzano

Molecular simulations allow to investigate the behaviour of materials at the atomistic level, shedding light on phenomena that cannot be directly observed in experiments. Accurate results can be obtained with ab initio methods, while simulations of large-s ...

EPFL2021

Microscale Liquid Metal Conductors for Stretchable and Transparent Electronics

Stéphanie Lacour, Giuseppe Schiavone, Ivan Furfaro, Laurent Mirko Dejace, Haotian Chen

Integrated wearable electronics capable of transducing and transmitting biophysical information on complex and dynamic systems are attracting high interest across the consumer electronics, clinical, and research domains. Gallium and gallium-based liquid me ...

Wiley2021

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

The path towards 1 µm monocrystalline Zn3 P2 films on InP: substrate preparation, growth conditions and luminescence properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Elias Zsolt Stutz, Rajrupa Paul, Mirjana Dimitrievska, Reza Zamani

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide (Zn_3 P_2) films with thicknesses up to ...

2021

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...

2021

Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Yves Bellouard, Victor Carle Adrien Boureau, Ruben Ricca

We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4 and SiO2 layers of sub-micrometer thickness. Specifically, we report on ...

2021

Magnetic-free Nitride Optical Isolator on Chip

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Jijun He, Anat Siddharth, Terence Albert Emile Blésin

We demonstrated a magnetic-free optical isolator for Si3N4 photonics using AlN piezoelectric actuators. Maximum of 10 dB isolation and

IEEE2021

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

ZnSnxGe1-xN2 as electron-selective contact for silicon heterojunction solar cells

Christophe Ballif, Mathieu Gérard Boccard, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Julien Hurni

This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity ...

IEEE2021