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Related publications (32)

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A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Microstructure Selection in Laser Remelted Fe-C-Si Alloys

Wilfried Kurz

Laser surface remelting at various velocities has been employed to study the selection of microstructures of high-purity Fe-C-Si alloys containing nominally 3.2 to 4.2 wt.% C and 1 to 3 wt.% Si. The microstructure of the remelted region consisted of metast ...

WALTER DE GRUYTER GMBH2021

Microscale Liquid Metal Conductors for Stretchable and Transparent Electronics

Stéphanie Lacour, Giuseppe Schiavone, Ivan Furfaro, Laurent Mirko Dejace, Haotian Chen

Integrated wearable electronics capable of transducing and transmitting biophysical information on complex and dynamic systems are attracting high interest across the consumer electronics, clinical, and research domains. Gallium and gallium-based liquid me ...

Wiley2021

Transferable machine-learning models of complex materials: the case of GaAs

Giulio Imbalzano

Molecular simulations allow to investigate the behaviour of materials at the atomistic level, shedding light on phenomena that cannot be directly observed in experiments. Accurate results can be obtained with ab initio methods, while simulations of large-s ...

EPFL2021

Crystallization kinetics of atomic crystals revealed by a single-shot and single-particle X-ray diffraction experiment

Christoph Bostedt

Crystallization is a fundamental natural phenomenon and the ubiquitous physical process in materials science for the design of new materials. So far, experimental observations of the structural dynamics in crystallization have been mostly restricted to slo ...

National Academy of Sciences2021

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Luca Nela, Palliyage Srilak Nirmana Perera, Catherine Erine

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

2021

Exploiting end-of-life lamps fluorescent powder e-waste as a secondary resource for critical rare earth metals

Christian Ludwig, Rudolf Paul Wilhelm Jozef Struis, Ajay Bhagwan Patil

The consensus is growing for the UN sustainable development goals regarding responsible consumption, production, and climate actions. Because of growth towards a digital society (“industry 4.0 revolution”), it is needed to have our resources and economies ...

2021

Exploring the Chemical Reactivity of Gallium Liquid Metal Nanoparticles in Galvanic Replacement

Raffaella Buonsanti, Laia Castilla Amorós, Dragos-Constantin Stoian, James Richard Pankhurst, Seyedehbehnaz Varandili

Micron/nanosized particles of liquid metals possess intriguing properties and are gaining popularity for applications in various research fields. Nevertheless, the knowledge of their chemistry is still very limited compared to that of other classes of mate ...

2020

Gallium-Based Thin Films for Wearable Sensors and Electronic Skins

Laurent Mirko Dejace

Integrated wearable electronics capable of providing biophysical information on complex and dynamic systems have attracted high interest in diverse fields such as healthcare, gaming and robotics. Wearable sensors can create artificial, electronic skins wit ...

EPFL2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Linking Isotope Exchange with Fe(II)-Catalyzed Dissolution of Iron(hydr)oxides in the Presence of the Bacterial Siderophore Desferrioxamine-B

Janet Gordon Hering

Dissolution of Fe(III) phases is a key process in making iron available to biota and in the mobilization of associated trace elements. Recently, we have demonstrated that submicromolar concentrations of Fe(II) significantly accelerate rates of ligand-contr ...

AMER CHEMICAL SOC2020