Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Radiation hardening

Related publications (30)

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Characterization of the Radiation Resistance of Glass Fiber Reinforced Plastics for Superconducting Magnets

Cinta Lucia Marraco Borderas

The overall performance of accelerator magnets strongly relies on electrical and mechanical robustness of their components. With an increase of the energy, future particle accelerators will have to withstand integral doses of ionizing radiation of up to se ...

IEEE Institute of Electrical and Electronics Engineers2022

Optical computing and reconfiguring with spatiotemporal nonlinearities in waveguides

Demetri Psaltis, Christophe Moser, Ugur Tegin, Ilker Oguz

A device for optical computing comprises at least one modulator (210, 710, 810, 910, 1010, 1110, 1210, 1310, 1410, 1520, 1610, 1710, 1810, 1910, 2010, 2110, 2210) and at least one waveguide (220, 720, 820, 920, 1020, 1120, 1220, 1320, 1420, 1530, 1620, 172 ...

2022

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Nicolas Würsch, Sylvain Dunand

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

A novel approach for SPICE modeling of light and radiation effects in ICs

Chiara Rossi

Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...

EPFL2021

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Roadmap on dynamics of molecules and clusters in the gas phase

Eduardo Carrascosa Casado

This roadmap article highlights recent advances, challenges and future prospects in studies of the dynamics of molecules and clusters in the gas phase. It comprises nineteen contributions by scientists with leading expertise in complementary experimental a ...

SPRINGER2021

Blocking the Charge Recombination with Diiodide Radicals by TiO2 Compact Layer in Dye-Sensitized Solar Cells

Ulf Anders Hagfeldt, Nikolaos Vlachopoulos, Kazuteru Nonomura

The addition of a compact titanium dioxide (TiO2) layer between the fluorine-doped tin oxide (FTO) coated glass substrate and the mesoporous TiO2 layer in the dye-sensitized solar cell (DSC) based on the iodide/triiodide redox couple (I-/I-3(-)) is known t ...

ELECTROCHEMICAL SOC INC2019